Impact of Ge implantation on the electrical characteristics of TiSi 2 p+/n shallow junctions with an a-Si (or a poly-Si) buffer layer

A new technology for forming a titanium-silicide shallow junction by combining germanium implantation with an amorphous-silicon (or a poly-silicon) buffer layer has been proposed for MOSFETs. The use of a buffer layer between Ti and Si can avoid the consumption of bulk-silicon and the recession of TiSi₂ film into the source/drain junctions during the silicidation process. In this study, the important role of germanium-implantation on the formation of TiSi₂ contacted p⁺/n junctions was examined. After subsequent implantation of Ge⁺ and B⁺ into the TiSi₂ film, samples were annealed at different temperatures to form p ⁺/n junctions and C54-TiSi₂. Since the penetration of titanium atoms was suppressed due to the germanium-implantation, the periphery leakage and the generation leakage were improved and TiSi₂/Si interfaces were even smooth. Therefore, p⁺/n junctions with a very low leakage current (0.192 nA/cm ² at -5 V) and an excellent forward ideality factor (n≈1.002) can be obtained. From the secondary ion mass spectrometry (SIMS) analysis, the junction depth is 400