Title :
Simulation of semiconductor devices with non-ideal metallic contacts
Author :
Schroeder, Dietmar ; Witkowski, Ulf
Author_Institution :
Tech. Electron., Tech. Univ. Hamburg-Harburg, Germany
fDate :
4/1/1997 12:00:00 AM
Abstract :
A comprehensive model of metal-semiconductor contacts that includes both thermionic emission and tunneling effects is reported. The model is particularly suited for the simulation of power devices. As an application example, simulation results of a hybrid Schottky-/pn-diode, also known as Junction Barrier Controlled Schottky Diode (JBS) or Merged pn-Schottky Diode (MPS), are presented
Keywords :
Schottky diodes; power semiconductor diodes; semiconductor device models; semiconductor-metal boundaries; thermionic electron emission; tunnelling; Junction Barrier Controlled Schottky Diode; Merged pn-Schottky Diode; hybrid Schottky-/pn-diode; model; nonideal metal-semiconductor contact; power device; semiconductor device; simulation; thermionic emission; tunneling; Boundary conditions; Charge carrier processes; Poisson equations; Schottky barriers; Schottky diodes; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling; Thermionic emission; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
