Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

Author

Kim, Yong-Hoon ; Han, Jeong-In ; Park, Sung Kyu

Author_Institution

Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

Volume

33

Issue

1

fYear

2012

Firstpage

50

Lastpage

52

Abstract

Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.

Keywords

high electron mobility transistors; thin film transistors; tin compounds; zinc compounds; atomic composition ratio; metallic components; operational stability; oxidation potentials; solution-processed thin-film transistors; Circuit stability; Logic gates; Stress; Thin film transistors; Tin; Zinc; Composition ratio; operation stability; solution process; thin-film transistor (TFT); zinc–tin–oxide (ZTO);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2171913

Filename

6082369