High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55 μm wavelength range

Author

Kollakowski, St. ; Bottcher, E.H. ; Strittmatter, A. ; Bimberg, Dieter

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin

Volume

34

Issue

6

fYear

1998

fDate

3/19/1998 12:00:00 AM

Firstpage

587

Lastpage

589

Abstract

Waveguide-integrated metal-semiconductor-metal photodetectors based on MOCVD-grown InP/InGaAs/InAlGaAs/InP layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm, and 0.7 μm feature-size electrodes. An internal coupling efficiency of ⩾90% has been achieved for detector lengths as short as 20 and 30μm at wavelengths of 1.3 and 1.55 μm, respectively. A 3dB bandwidth of 20 GHz at 1.55 μm has been obtained

Keywords

III-VI semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical planar waveguides; photodetectors; semiconductor epitaxial layers; semiconductor growth; 0.7 micron; 1.3 to 1.55 micrometre; 150 nm; 20 GHz; 20 to 30 micron; 3dB bandwidth; 90 percent; III-V semiconductors; InGaAs-InAlGaAs-InP; MOCVD; absorbing layer thickness; detector lengths; evanescent field coupled detectors; internal coupling efficiency; waveguide-integrated MSM photodetectors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980439

Filename

674305