Title :
An In0.5(Al0.3Ga0.7)0.5P/In 0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2 V operation
Author :
Wang, Y.C. ; Kuo, J.M. ; Lothian, J.R. ; Ren, F. ; Tsai, H.S. ; Weiner, J.S. ; Lin, J. ; Tate, A. ; Chen, Y.K. ; Mayo, W.E.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/19/1998 12:00:00 AM
Abstract :
The authors report the first power performance of In0.5(Al0.3Ga0.7)0.5P/In 0.2Ga0.8As double-heterojunction pseudomorphic high electron mobility transistors (DH-PHEMTs) for portable wireless power applications. At 850 MHz, a 1 μm×5mm device demonstrated a maximum power-added efficiency (PAE) of 65.2 and 68.2% under 1.2 and 2 V operation, respectively. At 1.9 GHz, a 53% peak PAE, a 8.3 dB linear power gain, and a 25 dBm saturated output power were obtained from the same device at a drain bias of 2V
Keywords :
UHF field effect transistors; leakage currents; personal communication networks; power HEMT; radio transmitters; 1 micron; 1.2 V; 1.9 GHz; 2 V; 53 percent; 65.2 percent; 68.2 percent; 8.3 dB; 850 MHz; DH-PHEMTs; In0.5(Al0.3Ga0.7)0.5 P-In0.2Ga0.8As; UHF power FETs; drain bias; linear power gain; portable wireless power applications; power HEMT; power-added efficiency; saturated output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980430
