Title :
Optimisation of bistable quantum well IR phototransistors
Author :
Ryzhii, V. ; Khmyrova, I. ; Ryzhii, M.
Author_Institution :
Comput. Solid State Phys. Lab., Aizu Univ., Japan
fDate :
10/1/1997 12:00:00 AM
Abstract :
Bistable GaAs quantum-well infrared phototransistors (BQWIPs) utilising intersubband electron phototransitions and resonant-tunnelling injection are considered. The mechanisms of the bistability effect are discussed. An analytical model of the BQWIP operation is proposed and used to derive its characteristics. To optimise the BQWIP performance the parameters of the hysteresis loops in the BQWIP characteristics are obtained as functions of its physical parameters
Keywords :
gallium arsenide; GaAs quantum-well infrared phototransistors; analytical model; bistability effect; bistable quantum well IR phototransistor optimisation; hysteresis loops; intersubband electron phototransitions; physical parameters; resonant-tunnelling injection;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19971312
