• DocumentCode
    1377720
  • Title

    Integration of Nanoelectromechanical Relays With Silicon nMOS

  • Author

    Chong, Soogine ; Lee, Byoungil ; Mitra, Subhasish ; Howe, Roger T. ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • Volume
    59
  • Issue
    1
  • fYear
    2012
  • Firstpage
    255
  • Lastpage
    258
  • Abstract
    Electrostatically actuated nanoelectromechanical (NEM) relays are integrated with silicon nMOS devices. An nMOSFET successfully drives a NEM relay with the MOSFET serving as a pass transistor to control the state of the relay. Silicon MOSFET-NEM relay integration opens up the possibility for applications, where the zero off-state leakage, the sharp on/off transition, and/or the hysteresis of the NEM relay can be used to complement the capabilities of CMOS.
  • Keywords
    CMOS integrated circuits; MOSFET; nanoelectromechanical devices; silicon; CMOS integrated circuits; electrostatically actuated nanoelectromechanical relays; nMOSFET; off-state leakage; pass transistor; silicon nMOS; Awards activities; CMOS integrated circuits; Educational institutions; Electrical engineering; MOS devices; Relays; Silicon; MOSFETs; Microelectromechanical devices; nanotechnology; relay;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2172946
  • Filename
    6082431
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1377720