DocumentCode :
1377725
Title :
Theory of quantum well IR photodetectors with tunnelling electron injection
Author :
Ryzhii, V.
Author_Institution :
Comput. Solid State Phys. Lab., Aizu Univ., Japan
Volume :
144
Issue :
5
fYear :
1997
fDate :
10/1/1997 12:00:00 AM
Firstpage :
343
Lastpage :
349
Abstract :
A simple analytical model of quantum-well infrared photodetectors (QWIPs) utilising intersubband electron transitions and tunnelling injection of electrons is developed. It is shown that the dark current and the responsivity as functions of the QWIP parameters, including the number of QWs, are expressed by means of solutions of a transcendent equation. This equation is valid for a wide range of parameters and conditions where QWIPs can exhibit effective operation. Explicit formulae for the dark current and the responsivity are obtained in some important cases. Nonlinear effects in the QWIP operation are considered and threshold values of bias voltage and intensity of infrared radiation are estimated
Keywords :
dark conductivity; infrared detectors; nonlinear optics; photodetectors; semiconductor device models; tunnelling; analytical model; dark current; intersubband electron transitions; nonlinear optics; quantum well IR photodetectors; quantum-well infrared photodetectors; responsivity; transcendent equation solution; tunnelling electron injection; tunnelling injection;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19971215
Filename :
674339
Link To Document :
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