Title :
Electro-optical measurement of high-field conductivity in delta -doped GaAs epitaxial layers
Author :
Balynas, Y. ; Stalnionis, A. ; Krotkus, A. ; Troideris, G. ; Lideikis, T.
Author_Institution :
Semiconductor Phys Inst., Acad. of Sci., Vilnius, USSR
Abstract :
An electro-optical sampling technique for high-field conductivity measurement was proposed and electron drift velocity in delta -doped GaAs samples was measured. The authors measured the velocity-field characteristics of 2-DEG in delta -doped structures with DC pulses as short as 30 ps. A Nd3+:YAlO3 laser system was used in the experiments. For stabilising the laser pulse energy the system was equipped with a special Q-switch and a fast electronic feedback loop inside the laser cavity.
Keywords :
III-V semiconductors; carrier mobility; electrical conductivity measurement; electronic conduction in crystalline semiconductor thin films; gallium arsenide; high field effects; measurement by laser beam; semiconductor epitaxial layers; 30 ps; DC pulses; GaAs; III-V semiconductors; Nd 3+:YAlO 3 laser system; Q-switch; YAlO 3:Nd 3+; conductivity measurement; delta -doped GaAs epitaxial layers; drift velocity measurement; electro-optical sampling technique; electron drift velocity; fast electronic feedback loop; high-field conductivity; laser cavity; laser pulse energy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910002
