• DocumentCode
    1378307
  • Title

    Simple measurement of carrier induced refractive-index change in InGaAsP PIN ridge waveguide structures

  • Author

    Schraud, G. ; Müller, G. ; Stoll, L. ; Wolff, U.

  • Author_Institution
    Tech. Univ., Munich, West Germany
  • Volume
    27
  • Issue
    4
  • fYear
    1991
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    The carrier induced refractive-index change Delta n in integrated InGaAsP 1.30 mu m interferometer structures is evaluated by 1.55 mu m transmission measurements. At carrier concentrations N from 8*1016/cm3 to 3*1018/cm3 a value of Delta n/N=-1*10-20 cm3 is obtained. A good agreement of the experimental results with theoretical predictions on bandfilling, plasma effect and bandgap shrinkage is demonstrated.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; integrated optics; light interferometers; optical waveguides; refractive index; 1.3 micron; 1.55 micron; InGaAsP; PIN ridge waveguide structures; bandfilling; bandgap shrinkage; carrier concentrations; carrier induced refractive-index change; integrated interferometer structures; p-i-n structures; plasma effect; transmission measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910187
  • Filename
    86718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1378307