DocumentCode
1379149
Title
Failure-rate studies on silicon rectifiers
Author
Bechtold, N. F. ; Hanks, C. L.
Author_Institution
U. S. Army Signal Engineering Laboratories, Fort Monmouth, N. J.
Volume
77
Issue
1
fYear
1958
Firstpage
49
Lastpage
56
Abstract
The magic word semiconductor has been placed upon the lips of almost every electronically minded individual in the United States through untiring publicity efforts by manufacturers and their representatives. In accomplishing this purpose, the sales promoter often has impaired the future value of these new devices with predictions of unlimited life and hopeful claims for operating capabilities. These claims, although corroborated by theory, apparently have not yet been fulfilled in reasonable quantity with present production techniques for low-power silicon rectifiers. Until greater reproducibility can be attained, derating of both forward current and reverse voltage is necessary for a useful low failure rate.
Keywords
Heating; Junctions; Rectifiers; Repeaters; Silicon; Temperature; Voltage measurement;
fLanguage
English
Journal_Title
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher
ieee
ISSN
0097-2452
Type
jour
DOI
10.1109/TCE.1958.6372757
Filename
6372757
Link To Document