• DocumentCode
    1379149
  • Title

    Failure-rate studies on silicon rectifiers

  • Author

    Bechtold, N. F. ; Hanks, C. L.

  • Author_Institution
    U. S. Army Signal Engineering Laboratories, Fort Monmouth, N. J.
  • Volume
    77
  • Issue
    1
  • fYear
    1958
  • Firstpage
    49
  • Lastpage
    56
  • Abstract
    The magic word semiconductor has been placed upon the lips of almost every electronically minded individual in the United States through untiring publicity efforts by manufacturers and their representatives. In accomplishing this purpose, the sales promoter often has impaired the future value of these new devices with predictions of unlimited life and hopeful claims for operating capabilities. These claims, although corroborated by theory, apparently have not yet been fulfilled in reasonable quantity with present production techniques for low-power silicon rectifiers. Until greater reproducibility can be attained, derating of both forward current and reverse voltage is necessary for a useful low failure rate.
  • Keywords
    Heating; Junctions; Rectifiers; Repeaters; Silicon; Temperature; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1958.6372757
  • Filename
    6372757