Title :
Autocorrelation and ultrafast optical thresholding at 1.5 μm using a commercial InGaAsP 1.3 μm laser diode
Author :
Barry, L.P. ; Thomsen, B.C. ; Dudley, J.M. ; Harvey, J.D.
Author_Institution :
Dept. of Phys., Auckland Univ., New Zealand
fDate :
2/19/1998 12:00:00 AM
Abstract :
Two-photon absorption in a commercial InGaAsP 1.3 μm Fabry-Perot laser diode has been used for autocorrelation measurements of picosecond pulses at 1.5 μm with average power peak-power products as low as 0.15×10-3 (mW)2. The laser diode has also been observed to possess a sub-nanosecond electrical response suitable for optical thresholding applications
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical correlation; semiconductor lasers; two-photon processes; 1.3 micron; 1.5 micron; InGaAsP; InGaAsP Fabry-Perot laser diode; autocorrelation measurement; picosecond pulse; sub-nanosecond electrical response; two-photon absorption; ultrafast optical thresholding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980298
