3-V MSM-TIA for Gigabit Ethernet

Author

Jayakumar, Anthony ; Bustos, Melody S. ; Cheskis, David ; Pietrucha, Stephen J. ; Bonelli, Mark ; Al-Kuran, Shihab ; Scheinberg, Norman

Author_Institution

ANADIGICS Inc., Warren, NJ, USA

Volume

35

Issue

9

fYear

2000

Firstpage

1271

Lastpage

1275

Abstract

The paper describes a 3-V monolithically integrated metal-semiconductor-metal photodetector (MSM-PD) and transimpedance amplifier (TIA) chip that is fully compliant with the Gigabit Ethernet receiver specification for the short-reach application (IEEE 802.3z 1000BASE-SX). Key typical performance specifications are -22 dBm sensitivity, 1200 MHz 3-dB bandwidth, 1300-V/W differential responsivity, and 120-mW power dissipation at 3 V. The chip is fabricated in a production 0.5-/spl mu/m gate length GaAs MESFET technology and is packaged in a TO-46 header with a flat window and a ball-lens cap option.

Keywords

III-V semiconductors; MESFET integrated circuits; amplifiers; gallium arsenide; low-power electronics; metal-semiconductor-metal structures; optical fiber LAN; optical receivers; photodetectors; 0.5 micron; 120 mW; 1200 MHz; 3 V; GaAs; GaAs MESFET technology; Gigabit Ethernet receiver; MSM-PD; MSM-TIA; metal-semiconductor-metal photodetector; monolithic integration; transimpedance amplifier; Bandwidth; Detectors; Electrodes; Ethernet networks; Gallium arsenide; MESFETs; Optical amplifiers; Optical receivers; Photodetectors; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.868035

Filename

868035