Title :
Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors
Author :
Li, Ting ; Lambert, D.J.H. ; Beck, A.L. ; Collins, C.J. ; Yang, B. ; Wong, M.M. ; Chowdhury, U. ; Dupuis, R.D. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
8/31/2000 12:00:00 AM
Abstract :
Solar-blind Schottky metal-semiconductor-metal photodetectors fabricated on epitaxial Al0.4Ga0.6N layers grown by metalorganic chemical vapour deposition are reported. The devices exhibit low dark current and an external quantum efficiency as high as 49% (at λ=272 nm) at 90 V bias, with a corresponding responsivity R=107 mA/W. A visible-to-UV rejection factor of more than three orders of magnitude is demonstrated. The 3 dB bandwidth is 100 MHz and the detectivity is estimated to be 3.3×1010 cm.Hz1/2 /W
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; 100 MHz; 272 nm; 49 percent; 90 V; Al0.4Ga0.6N; MOCVD growth; detectivity; epitaxial Al0.4Ga0.6N layers; external quantum efficiency; low dark current; metalorganic chemical vapour deposition; responsivity; solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors; solar-blind Schottky metal-semiconductor-metal photodetectors fabrication; visible-to-UV rejection factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001110
