Title :
Highly reliable planar GaInAs/InP photodiodes with high yield made by atmospheric pressure MOVPE
Author :
Robertson, Mike J. ; Ritchie, S. ; Sargood, S.K. ; Nelson, A.W. ; Davis, Lisa ; Walling, R.H.
Author_Institution :
British Telecom Res. Lab., Martlesham Heath, Ipswich
fDate :
3/3/1988 12:00:00 AM
Abstract :
A process for making GaInAs/InP PIN photodiodes based on atmospheric pressure MOVPE is described. The technique gives devices with very low dark currents (≪1 nA) and capacitances (<0.2 pF). Yields on large area wafers greater than 80% can be achieved and extremely good reliability has been demonstrated (<0.4 FIT at 20°C)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; semiconductor growth; vapour phase epitaxial growth; GaInAs-InP; III-V semiconductors; PIN photodiodes; atmospheric pressure MOVPE; epitaxial growth; fabrication process; high reliability; high yield; large area wafers; low capacitance; low dark currents; planar p-i-n device;
Journal_Title :
Electronics Letters
