Wafer scale graphene transfer for back end of the line device integration

Author

Smith, A.D. ; Vaziri, S. ; Rodriguez, Saul ; Ostling, Mikael ; Lemme, M.C.

Author_Institution

KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2014

fDate

7-9 April 2014

Firstpage

29

Lastpage

32

Abstract

We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits.

Keywords

CMOS integrated circuits; elemental semiconductors; field effect transistors; graphene; sensors; silicon; BEOL process flows; CMOS circuits; RF applications; Si; graphene based field effect transistors; graphene sensors; high speed GFET devices; radiofrequency applications; scalable graphene transfer method; sensor applications; standard back end of the line process flows; wafer scale fabrication; CMOS integrated circuits; Fabrication; Graphene; Logic gates; Radio frequency; Silicon; Transistors; GFET; Moore´s Law; graphene; graphene transfer; more than Moore; transistors; wafer scale;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on

Conference_Location

Stockholm

Type

conf

DOI

10.1109/ULIS.2014.6813898

Filename

6813898