Title :
A quasi-two-dimensional HEMT model for DC and microwave simulation
Author :
Singh, Ranjit ; Snowden, Christopher M.
Author_Institution :
Nat. Phys. Lab., New Delhi, India
fDate :
6/1/1998 12:00:00 AM
Abstract :
A comprehensive quasi-two-dimensional (Q-2-D) physical HEMT simulator is described for microwave CAD applications. It is used to accurately predict the DC and small-signal microwave performance of HEMT´s. This simulator, which accounts for hot-electron effects in submicron HEMT´s, includes parasitic MESFET conduction, quantum effects, and substrate injection phenomena. The accuracy of the present simulator is demonstrated by comparison with measured data for microwave HEMT´s
Keywords :
circuit CAD; circuit analysis computing; high electron mobility transistors; hot carriers; microwave field effect transistors; semiconductor device models; DC simulation; hot-electron effects; microwave CAD applications; microwave HEMT; microwave simulation; parasitic MESFET conduction; physical HEMT simulator; quantum effects; quasi-two-dimensional HEMT model; small-signal microwave performance; submicron HEMT; substrate injection phenomena; Circuit simulation; Computational modeling; HEMTs; MMICs; Microwave devices; Nonhomogeneous media; Quantum mechanics; Steady-state; Substrates; Time domain analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
