An investigation on the role of current compliance in HfO2-based RRAM in HRS using RTN and I-V data

In this paper we investigate the effect of current compliance during forming in HfO₂-based Resistive Random Access Memories (RRAMs). We implemented a thorough statistical characterization of Random Telegraph Noise (RTN) in High Resistive State (HRS). Complex RTN signals are analyzed through a Factorial Hidden Markov Model (FHMM) approach, deriving the statistical properties of traps responsible for the multi-level RTN measured in these devices. Noise is explored in devices formed at different current compliances, demonstrating a direct relation between the current compliance, the cross-section of both the CF and the dielectric barrier created during the reset operation, and the number of active traps contributing to the RTN.