A new approach for modeling drain current process variability applied to FDSOI technology

This paper proposes a novel methodology for modeling process related FDSOI MOSFET drain current variability. The novelty of our methodology is to combine statistical analysis tools (RSM, Stepwise Regression (SWR) and DOE) with a simple analytical drain current model. Our approach is finally compared to conventional least square method (LSM) and SWR.