Title :
A simplified impact ionization model based on the average energy of hot-electron subpopulation
Author :
Tang, Ting-wei ; Nam, Joonwoo
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
A previously developed nonlocal impact ionization model based on the average energy of hot-electron subpopulation has been further simplified. The system of hydrodynamic transport equations consisting of three equations for these high-energy electrons has been reduced to a single equation. The simulation results for n/sup +/-n-n/sup +/ structures are in good agreement with Monte Carlo (MC) calculations. The model is easily applicable to two-dimensional (2-D) problems by exploiting the current flow line approach.
Keywords :
hot carriers; impact ionisation; semiconductor device models; 2D problems; average energy; current flow line approach; high-energy electrons; hot-electron subpopulation; hydrodynamic transport equation; impact ionization model; n/sup +/-n-n/sup +/ structure; two-dimensional problems; Cities and towns; Data mining; Electrons; Equations; High definition video; Hydrodynamics; Impact ionization; Monte Carlo methods; Parameter extraction; Random access memory;
Journal_Title :
Electron Device Letters, IEEE
