DocumentCode :
1383110
Title :
Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content
Author :
Guo, Xin ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Volume :
19
Issue :
6
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
207
Lastpage :
209
Abstract :
It is widely known that the addition of nitrogen in silicon oxide, or the addition of oxygen in silicon nitride, affects its reliability as a gate dielectric. The authors examine the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates. It is shown that, provided that electron tunneling is the dominant current conduction mechanism, the gate leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness (EOT), such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest.
Keywords :
MIS capacitors; MISFET; dielectric thin films; leakage currents; semiconductor device reliability; semiconductor-insulator boundaries; silicon compounds; tunnelling; N content; O content; Si; Si substrates; SiON-Si; current conduction mechanism; electron tunneling; gate dielectric reliability; gate leakage current; oxynitride dielectric; tunneling leakage current; ultrathin silicon oxynitride films; Dielectric constant; Dielectric films; Dielectric substrates; Electrons; Leakage current; Nitrogen; Oxygen; Semiconductor films; Silicon; Tunneling;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.678546
Filename :
678546
Link To Document :
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