Title :
Theory of hot carrier effects on nonlinear gain in GaAs-GaAlAs lasers and amplifiers
Author :
Gomatam, Badri N. ; DeFonzo, Alfred P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
A concise and straightforward model of nonlinear grain based on the carrier heating effect in semiconductor lasers is presented. The problem is formulated using the density matrix approach and includes a priori the effect of free-carrier absorption. Coupled field-medium equations involving photon densities, carrier densities, and carrier temperatures are derived using the results of the density matrix method. The propagation of ultrashort pulses in laser amplifiers is studied and a qualitatively new model along with results on the transient gain recovery dynamics are presented. The model accounts for the wavelength dependence of the asymmetric part of the nonlinear gain observed in direct mixing experiments observed in semiconductor lasers
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high-speed optical techniques; hot carriers; laser theory; nonlinear optics; semiconductor device models; semiconductor junction lasers; GaAs-GaAlAs lasers; carrier densities; carrier heating effect; carrier temperatures; coupled field medium equations; density matrix approach; direct mixing experiments; free-carrier absorption; hot carrier effects; laser amplifiers; nonlinear gain; photon densities; semiconductor lasers; transient gain recovery dynamics; ultrashort pulses; wavelength dependence; Absorption; Charge carrier density; Heating; Hot carrier effects; Laser modes; Laser theory; Nonlinear equations; Pulse amplifiers; Semiconductor lasers; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of