DocumentCode
1384646
Title
Spatial mode structure of index-guided broad-area quantum-well lasers
Author
Chang-Hasnain, Constance J. ; Kapon, Eli ; Colas, Etienne
Author_Institution
Bellcore, Red Bank, NJ, USA
Volume
26
Issue
10
fYear
1990
fDate
10/1/1990 12:00:00 AM
Firstpage
1713
Lastpage
1716
Abstract
The spatial mode characteristics of index-guided ridge-waveguide broad-area (BA) quantum-well lasers grown by organometallic chemical vapor deposition were investigated experimentally. The index-guided BA lasers lase in a high-order lateral mode, and thus emit a double-lobed far-field pattern. This is significantly different from their gain-guided counterparts, which lase in the fundamental mode. For BA lasers with the same width and made on the same or similar material, the index-guided lasers have lower threshold currents, higher quantum efficiencies, and better linearity in the light versus current characteristics. It is observed that the order of the dominant high-order lateral-mode increased with increasing laser width or effective index step of the laser waveguide. In addition, it is found that the mechanism for degradation in the spatial coherence at high pumping levels is the onset of higher order lateral modes
Keywords
laser modes; optical waveguides; refractive index; semiconductor junction lasers; double-lobed far-field pattern; effective index step; high pumping levels; high-order lateral mode; index-guided broad-area quantum-well lasers; laser waveguide; laser width; light versus current characteristics; organometallic chemical vapor deposition; quantum efficiencies; ridge-waveguide; spatial coherence degradation; spatial mode characteristics; threshold currents; Chemical lasers; Chemical vapor deposition; Laser modes; Linearity; Optical materials; Pump lasers; Quantum well lasers; Quantum wells; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.60894
Filename
60894
Link To Document