Title :
Quantum-confined Stark effects in semiconductor quantum disks
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
10/1/1996 12:00:00 AM
Abstract :
Quantum-confined Stark effects (QCSE´s) on excitons in semiconductor quantum disks with finite-potential barriers have been calculated as a function of disk size parameters by a variational calculation in an effort to examine possible application to optical devices. The calculations agree with experimental data reported so far. Although the exciton binding energy, Eb, for smaller diameters is large at zero bias, it decreases more with increasing electric field, which is contrary to the Eb behavior in a spherical quantum dot and quantum well. This larger decrease results in a smaller red Stark shift. Both the red Stark shift and the oscillator strength can be controlled by changing disk diameter and height. The analysis shows that favorable QCSE characteristics, i.e., a large red Stark shift at a small electric field with large oscillator strength, can be obtained
Keywords :
binding energy; excitons; oscillator strengths; quantum confined Stark effect; red shift; semiconductor quantum wells; QCSE characteristics; disk diameter; disk height; disk size parameters; electric field; exciton binding energy; excitons; finite-potential barriers; optical devices; oscillator strength; quantum well; quantum-confined Stark effects; red Stark shift; semiconductor quantum disks; spherical quantum dot; variational calculation; zero bias; Absorption; Diode lasers; Excitons; Optical devices; Optical saturation; Oscillators; Quantum dots; Quantum mechanics; Stark effect; Wave functions;
Journal_Title :
Quantum Electronics, IEEE Journal of