High Current Gain Microwave Performance of Organic Metal-Base Transistor

We report the realization of 140 nm emitter TPD/CuPc (N,N´-diphenyl-N,N´-bis(3-methylphenyl)-(1,1´-biphenyl)-4,4´-diamine/copper phthalocyanine) with cutoff frequency fT = 300 kHz. Our devices were grown on high-resistivity p-type float-zone silicon collector and implemented with an aluminum grid base feature a high and stable current gain well above 400. The present transistors are the first metal-base transistors employing double hole injection layer to feature current gain without any sign of degradation.