Title :
Operation of poly bipolar transistors near liquid-helium temperatures (9 K)
Author :
Kapoor, Ashok K. ; Jayadev, Tumkur S.
Author_Institution :
Fairchild Res. Center, Palo Alto, CA, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
Operation of bipolar transistors with poly emitters with current gain beta >25 at 77 K and beta >3 at 9 K has been demonstrated. In the temperature range of 300 K to 9 K, the plot of beta vs. temperature (T) exhibits a minimum at T equal to 40 K: decreasing monotonically from 300 K to 40 K, remaining unchanged between 40 K to 30 K, and increasing slightly from 30 K to 9 K. This behavior is attributed to freezeout of acceptor impurities in the base for T<40 K.<>
Keywords :
bipolar transistors; cryogenics; elemental semiconductors; silicon; 9 to 300 K; Si; acceptor impurities; base region; bipolar transistors; cryogenic operation; current gain; freezeout; liquid-helium temperatures; low temperature operation; poly emitters; polycrystalline semiconductors; Bipolar transistors; Current measurement; Doping; Impurities; Packaging; Photonic band gap; Silicon; Temperature distribution; Temperature measurement; Testing;
Journal_Title :
Electron Device Letters, IEEE
