• DocumentCode
    1386256
  • Title

    Role of Process Variation in the Radiation Response of FGMOS Devices

  • Author

    McNulty, Peter J. ; Poole, Kelvin F. ; Scheick, Leif Z. ; Yow, Sushan

  • Author_Institution
    Dept. of Phys. & Astron., Clemson Univ., Clemson, SC, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2673
  • Lastpage
    2679
  • Abstract
    UV erasure times are measured and used to determine the degree of process variation across the die of FGMOS memories. Analysis of data obtained following exposure to ionizing radiation separates SEU-like mechanisms that generate anomalous decreases in erasure time from the uniform effects of TID.
  • Keywords
    CMOS integrated circuits; ultraviolet radiation effects; FGMOS devices; FGMOS memory die; SEU-like mechanisms; TID uniform effects; UV erasure times; ionizing radiation; process variation degree; radiation response; Ionizing radiation; Radiation effects; Single event upset; FGMOS; process variation; radiation effects; single-event effects; soft errors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2172987
  • Filename
    6093868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1386256