Title :
GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power
Author :
Choi, H.K. ; Walpole, J.N. ; Turner, G.W. ; Conners, M.K. ; Missaggia, L.J. ; Manfra, M.J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
Tapered lasers fabricated from a GaInAsSb-AlGaAsSb single-quantum-well structure are reported. The laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 50 A/cm/sup 2/ at room temperature. Tapered lasers have exhibited diffraction-limited continuous-wave output power up to 600 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; light diffraction; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 0.6 W; 2.05 mum; 600 mW; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb single-quantum-well structure; GaInAsSb-AlGaAsSb tapered lasers; broad-stripe pulsed threshold current densities; diffraction-limited continuous-wave output power; diffraction-limited power; laser structure; molecular beam epitaxy; quantum well lasers; room temperature; Apertures; Diffraction; Gas lasers; Molecular beam epitaxial growth; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
