Title :
High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector
Author :
Chiu, Yi-Jen ; Fleischer, Siegfried B. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
We report a novel type of p-i-n traveling-wave photodetector utilizing low-temperature-grown GaAs (LTG-GaAs). The devices show a record impulse response time (530-fs fullwidth at half-maximum, /spl sim/560 GHz -3-dB bandwidth) which agrees with theoretical estimates. The effects of various limiting factors on the device performance were analyzed theoretically and compared with measurements obtained by electrooptic characterization of our devices. Calculations indicate that the device speed is dominated by the short carrier lifetime. DC external quantum efficiencies as high as 8% were obtained.
Keywords :
III-V semiconductors; carrier lifetime; electro-optical effects; gallium arsenide; high-speed optical techniques; p-i-n photodiodes; photodetectors; transient response; 530 fs; 560 GHz; 8 percent; DC external quantum efficiencies; GaAs; device performance; device speed; electrooptic characterization; fs fullwidth at half-maximum; high-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector; impulse response time; limiting factors; low-temperature-grown GaAs; p-i-n traveling-wave photodetector; short carrier lifetime; Bandwidth; Capacitance; Charge carrier lifetime; Delay; Electrooptic devices; Gallium arsenide; III-V semiconductor materials; Optical pulses; PIN photodiodes; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
