Title :
A CMOS Integrated W-band Passive Imager
Author :
Qun Jane Gu ; Kang Yang ; Yi Xue ; Zhiwei Xu ; Tang, Anthony ; Nien, C.C. ; Wu, T.H. ; Tarng, J.H. ; Chang, Mau-Chung Frank
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California-Davis, Davis, CA, USA
Abstract :
This brief presents an integrated W-band passive imager, including a low-noise amplifier, a Dicke switch, a detector, a low-pass filter, a programmable-gain amplifier, and a 10-bit 20-MHz pipeline analog-to-digital converter (ADC). With digital outputs, the imager is ready to be interfaced with a digital signal processor to complete its system implementation. The chip is realized in a 65-nm CMOS technology. The measured average noise-equivalent power and responsivity are 32 fW/√{Hz} and 103 MV/W, respectively, which represents a noise-equivalent temperature difference of 1.0 K with 30-ms integration time. The integrated imager occupies a silicon area of 1.17 mm2 and burns 151 mW of power. To the authors´ best knowledge, this is the first time that a millimeter-wave passive imager is integrated with an on-chip ADC to generate digital outputs.
Keywords :
CMOS integrated circuits; analogue-digital conversion; millimetre wave imaging; millimetre wave integrated circuits; CMOS integrated W-band passive imager; Dicke switch; LNA; detector; digital signal processor; frequency 10 MHz; low-noise amplifier; low-pass filter; millimeter-wave passive imager; on-chip ADC; pipeline analog-to-digital converter; power 151 mW; programmable-gain amplifier; size 65 nm; temperature 1.0 K; time 30 ms; word length 10 bit; CMOS integrated circuits; Frequency measurement; Gain; Imaging; Noise; Semiconductor device measurement; Switches; Analog-to-digital converter (ADC); CMOS; W-band; passive imager;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2012.2228393
