DocumentCode
1387352
Title
Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect
Author
Lumpp, Janet K. ; Raman, Sudhakar
Author_Institution
Dept. of Electr. Eng., Kentucky Univ., Lexington, KY, USA
Volume
21
Issue
2
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
118
Lastpage
125
Abstract
The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of X-rays (EDAX) was performed at various points in the cross section to determine the elements present
Keywords
aluminium compounds; integrated circuit interconnections; laser ablation; laser beam machining; metallisation; micromachining; scanning electron microscopy; thick films; Al; AlN; Cu; EDAX; aluminum nitride substrate; conductor pad; electrical resistance; excimer laser ablation; laser machining; metal sheet; scanning electron microscopy; thick film interconnect; via metallization; Aluminum nitride; Atmospheric measurements; Conductive films; Copper; Laser ablation; Metallization; Scanning electron microscopy; Substrates; Thick films; X-ray lasers;
fLanguage
English
Journal_Title
Components, Packaging, and Manufacturing Technology, Part C, IEEE Transactions on
Publisher
ieee
ISSN
1083-4400
Type
jour
DOI
10.1109/3476.681388
Filename
681388
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