DocumentCode :
1388854
Title :
RF MEMS Fractal Capacitors With High Self-Resonant Frequencies
Author :
Elshurafa, Amro M. ; Radwan, Ahmed G. ; Emira, Ahmed ; Salama, Khaled N.
Author_Institution :
King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Volume :
21
Issue :
1
fYear :
2012
Firstpage :
10
Lastpage :
12
Abstract :
This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention.
Keywords :
Q-factor; capacitors; internal stresses; micromechanical devices; radiofrequency integrated circuits; PolyMUMPS; RF MEMS fractal capacitors; bandwidth 1 GHz to 15 GHz; etching holes; microelectromechanical systems; quality factors; residual stress warping; self-resonant frequency; Capacitance; Capacitors; Etching; Fractals; Metals; Micromechanical devices; Shape; $Q$ ; Capacitors; RF microelectromechanical systems (MEMS); fractals; self-resonant frequency (SRF);
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2011.2175367
Filename :
6095305
Link To Document :
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