Enhancement of giant magneto-impedance in layered film by insulator separation

Author

Morikawa, Takeshi ; Nishibe, Yuji ; Yamadera, Hideya ; Nonomura, Yutaka ; Takeuchi, Masaharu ; Sakata, Jiro ; Taga, Yasunori

Author_Institution

Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan

Volume

32

Issue

5

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

4965

Lastpage

4967

Abstract

Giant Magneto-Impedance (MI) effect of CoSiB/SiO₂/Cu/SiO₂/CoSiB films with line structures have been studied. Easy axes have been induced in perpendicular direction to the driving current, and the insulating SiO ₂ layers have prevented the driving current from penetrating into the CoSiB layers. This structure has enabled the effective occurrence of resistance change at a frequency as low as several MHz. As a result, impedance change ratios ΔZ/Z₀=(Z_maximum-Z(H_ext=0))/Z(H_ext=0) are much higher than that of any other layered film without insulating layers. The ΔZ/Z ₀ at 20 MHz is as high as 700% at 11 Oe, and the maximum slope is 300%/Oe

Keywords

boron alloys; cobalt alloys; copper; giant magnetoresistance; magnetic multilayers; silicon alloys; silicon compounds; 20 MHz; CoSiB-SiO₂-Cu-SiO₂-CoSiB; driving current; easy axis; giant magnetoimpedance; insulator separation; layered film; line structure; Amorphous magnetic materials; Amorphous materials; Frequency; Impedance; Insulation; Magnetic films; Magnetic sensors; Magnetic separation; Shape measurement; Soft magnetic materials;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.539303

Filename

539303