DocumentCode :
1390075
Title :
Schottky Diode Ultraviolet Detector Based on  \\hbox {TiO}_{2} Nanowire Array
Author :
Zhang, Haifeng ; Ruan, Shengping ; Li, Hailong ; Zhang, Min ; Lv, Kaibo ; Feng, Caihui ; Chen, Weiyou
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Volume :
33
Issue :
1
fYear :
2012
Firstpage :
83
Lastpage :
85
Abstract :
In this letter, a Schottky diode ultraviolet (UV) detector based on TiO2 nanowire (NW) array with Ag electrode is fabricated. The TiO2 NW array was prepared via a low-temperature hydrothermal method and characterized by means of X-ray diffraction, scanning electron microscope, and XPS. The Schottky barrier character of Ag/TiO2 contact was researched in detail. At -5-V bias, the dark current of the detector was less than 35 nA. Under the irradiation of 350-nm UV light, a high responsivity of 3.1 A/W was achieved due to the internal gain. The Schottky diode detector with simple fabrication process, low cost, and superior performance would provide a new way in fabricating UV imaging arrays.
Keywords :
Schottky diodes; X-ray diffraction; X-ray photoelectron spectra; nanowires; silver; titanium compounds; ultraviolet detectors; Ag-TiO2; Schottky diode ultraviolet detector; UV imaging arrays; X-ray diffraction; XPS; fabrication process; low-temperature hydrothermal method; nanowire array; scanning electron microscope; size 350 nm; voltage -5 V; Arrays; Dark current; Detectors; Electrodes; Photoconductivity; Schottky barriers; Schottky diodes; $hbox{TiO}_{2}$ ; Nanowire (NW) array; ultraviolet (UV) detector;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2173896
Filename :
6095586
Link To Document :
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