Title :
A model for sheet resistivity of RuO2 thick film resistors
Author_Institution :
Turner Lab., Purdue Univ., West Lafayette, IN, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
Considerations of microstructure composition relationships led to the conclusion that RuO2-based thick-film resistors can have five different types of microstructure for different ranges of the volume fraction of RuO2(Vc). A theoretical value consistent with the microstructure was developed to predict the sheet resistivity as a function of Vc and particle sizes of RuO2 and glass for the range 0.032< Vc<0.24. Experimental data are presented for two resistor systems containing the same RuO2 but different glass compositions. The sheet resistivities for the two resistor systems were similar at high values of Vc but differed by three orders of magnitude at low values of Vc. The two glasses had the same viscosity at the firing temperature, but the solubility of RuO2 was significantly different in the two glasses. The theoretical loading curve model was in excellent agreement with experimental results from the system using the glass with high RuO 2 solubility, but has not as yet been extended to the other system
Keywords :
ruthenium compounds; thick film resistors; RuO2; firing temperature; glass compositions; loading curve model; microstructure composition relationships; sheet resistivity; thick film resistors; viscosity; volume fraction; Bonding; Conductivity; Equations; Glass; Insulation; Lattices; Load modeling; Microstructure; Resistors; Thick films;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on