Title :
Improved gain SiGe multiquantum well infra-red detector
Author_Institution :
DERA Electron. Sector, Malvern, UK
fDate :
4/30/1998 12:00:00 AM
Abstract :
Calculations of self-consistent band structure for SiGe multiquantum well (MQW) systems suggest that grading the wells and counter doping can lead to large increases in photoconductive gain
Keywords :
Ge-Si alloys; infrared detectors; photoconducting devices; semiconductor materials; semiconductor quantum wells; SiGe; SiGe multiquantum well infrared detector; counter doping; grading; photoconductive gain; self-consistent band structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980677
