Title :
Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation
Author :
Mariucci, L. ; Giacometti, F. ; Pecora, A. ; Massussi, F. ; Fortunato, G. ; Valdinoci, M. ; Colalongo, L.
Author_Institution :
Istituto di Elettronica dello Stato Solido, CNR, Rome, Italy
fDate :
4/30/1998 12:00:00 AM
Abstract :
The authors have performed a 2D numerical analysis of the electrical characteristics of polysilicon thin-film transistors (TFTs), made by excimer laser crystallisation (ELC), with high field-effect mobility (>300 cm2/Vs) and low threshold voltage (<1.5 V). In spite of the highly non-uniform defect distribution in ELC-polysilicon (mainly localised at the grain boundaries), the authors show that the device characteristics can be adequately described by using, in the numerical analysis, an effective density of states uniformly distributed within the semiconductor. This model, already verified in solid phase crystallised polysilicon TFTs, allows the analysis of ELC-polysilicon devices to be simplified
Keywords :
crystallisation; elemental semiconductors; laser materials processing; semiconductor device models; silicon; thin film transistors; 1.5 V; 2D numerical analysis; Si; defect distribution; density of states; electrical characteristics; excimer laser crystallisation; field effect mobility; grain boundary; model; polysilicon thin film transistor; semiconductor; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980619
