Title :
Operation of InGaAs quasi-quantum-wire FET fabricated by selective growth using molecular beam epitaxy
Author :
Sugaya, T. ; Takahashi, T. ; Nakagawa, T. ; Ogura, M. ; Sugiyama, Y.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
A field effect transistor (FET) using single InGaAs quasi-quantum-wire (quasi-QWR) as a channel has been fabricated. The quasi-QWR structures were fabricated by selective growth using molecular beam epitaxy on non-planar InP substrate. The width and thickness of the quasi-QWR are 200 nm and 7 nm, respectively. The FET demonstrated good saturation characteristics and its maximum transconductance (gm) was 105 mS/mm at a drain voltage of 0.6 V
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum wires; InGaAs; InGaAs quasi-quantum-wire FET; field effect transistor; maximum transconductance; molecular beam epitaxy; nonplanar InP substrate; saturation characteristics; selective growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980672
