DocumentCode :
1391631
Title :
A new BiCMOS increased full-swing converter for low-internal-voltage ULSI systems
Author :
Chen, Ke-Horng ; Wang, Ching-Sung ; Kuo, Sy-Yen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
47
Issue :
8
fYear :
2000
fDate :
8/1/2000 12:00:00 AM
Firstpage :
1238
Lastpage :
1242
Abstract :
In this work, a new BiCMOS increased full-swing inverter (IFSI) and a new BiCMOS increased full-swing buffer (IFSB) for low voltage/low power ULSI systems are proposed. Based on the SPICE simulations, we demonstrate that these circuits can operate at low internal voltage (V int) and have low input signal swing. With Vint>|Vt| (assuming Vtn=-Vtp ), the circuits work properly. When the capacitor load is larger than 0.6 pf, the propagation delays and the delay power products of the proposed circuits for different internal voltages are better than those of previous circuits under the same circuit design parameters. Moreover, the proposed circuits achieve significant improvement in speed and noise margin. The results given here can avoid the trial and error step in the circuit sizing operation to reduce the power consumption
Keywords :
BiCMOS analogue integrated circuits; ULSI; buffer circuits; convertors; invertors; low-power electronics; 0.6 pF; BiCMOS increased full-swing buffer; BiCMOS increased full-swing converter; LV ULSI systems; SPICE simulations; delay power products; increased full-swing inverter; low power ULSI; low-internal-voltage ULSI systems; noise margin; power consumption; propagation delays; ultralarge scale integration; BiCMOS integrated circuits; Capacitors; Circuit noise; Circuit simulation; Circuit synthesis; Inverters; Low voltage; Propagation delay; SPICE; Ultra large scale integration;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.873878
Filename :
873878
Link To Document :
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