Title :
Differential distributed amplifier with 2:1 selector in InP DHBT for 100 Gbit/s operation
Author :
Dupuy, Jean-Yves ; Konczykowska, Agnieszka ; Jorge, Filipe ; Riet, M. ; Berdaguer, P. ; Moulu, J. ; Godin, J.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
A differential distributed amplifier integrated with a 2:1 selector has been designed and fabricated in a 0.7 ??m InP double hetero-junction bipolar transistor (DHBT) technology. Measurements were performed at 86 and 100 Gbit/s, showing clear output eye opening and a voltage swing of 2 ?? 2.3 V. The circuit is well suited to dual-drive electro-optical modulators for 100-Gbaud-based optical communications systems.
Keywords :
III-V semiconductors; differential amplifiers; distributed amplifiers; electro-optical modulation; heterojunction bipolar transistors; indium compounds; InP; bit rate 100 Gbit/s; bit rate 86 Gbit/s; differential distributed amplifier; double heterojunction bipolar transistor; dual-drive electro-optical modulators; size 0.7 mum; voltage 2.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3144
