• DocumentCode
    1393648
  • Title

    A relational database for semiconductor device parametric data

  • Author

    Harvey, Jerry ; Dyatlovitsky, Eugene

  • Author_Institution
    VLSI Technol. Inc., San Antonio, TX, USA
  • Volume
    3
  • Issue
    3
  • fYear
    1990
  • fDate
    8/1/1990 12:00:00 AM
  • Firstpage
    136
  • Lastpage
    141
  • Abstract
    Semiconductor device parametric test data collected by lot, wafer, and die form a hierarchical data structure that lends itself to two relational models reflecting two data views. The two models may be integrated by carefully considering relationships, and the resultant structure is applicable to in-process data collection. Semiconductor device parametric data models are discussed from the two viewpoints, and a practical database based on the set-theoretic relational data model is developed. Application of the developed model to semiconductor in-process and functional test data is also discussed
  • Keywords
    electronic engineering computing; integrated circuit manufacture; relational databases; semiconductor technology; die level; functional test data; hierarchical data structure; in-process data collection; lot level; practical database; relational database; relational models; semiconductor device parametric data; semiconductor device parametric test data; set-theoretic relational data model; wafer level; Circuit testing; Computer integrated manufacturing; Condition monitoring; Data models; Fabrication; Performance evaluation; Production facilities; Relational databases; Semiconductor device modeling; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.56564
  • Filename
    56564