DocumentCode
1393648
Title
A relational database for semiconductor device parametric data
Author
Harvey, Jerry ; Dyatlovitsky, Eugene
Author_Institution
VLSI Technol. Inc., San Antonio, TX, USA
Volume
3
Issue
3
fYear
1990
fDate
8/1/1990 12:00:00 AM
Firstpage
136
Lastpage
141
Abstract
Semiconductor device parametric test data collected by lot, wafer, and die form a hierarchical data structure that lends itself to two relational models reflecting two data views. The two models may be integrated by carefully considering relationships, and the resultant structure is applicable to in-process data collection. Semiconductor device parametric data models are discussed from the two viewpoints, and a practical database based on the set-theoretic relational data model is developed. Application of the developed model to semiconductor in-process and functional test data is also discussed
Keywords
electronic engineering computing; integrated circuit manufacture; relational databases; semiconductor technology; die level; functional test data; hierarchical data structure; in-process data collection; lot level; practical database; relational database; relational models; semiconductor device parametric data; semiconductor device parametric test data; set-theoretic relational data model; wafer level; Circuit testing; Computer integrated manufacturing; Condition monitoring; Data models; Fabrication; Performance evaluation; Production facilities; Relational databases; Semiconductor device modeling; Semiconductor devices;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.56564
Filename
56564
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