DocumentCode :
1394319
Title :
40 Gbit/s EAM driver IC in SiGe bipolar technology
Author :
Schmid, R. ; Meister, T.F. ; Rest, M. ; Rein, H.M.
Author_Institution :
Ruhr-Univ., Bochum, Germany
Volume :
34
Issue :
11
fYear :
1998
fDate :
5/28/1998 12:00:00 AM
Firstpage :
1095
Lastpage :
1097
Abstract :
An SiGe bipolar IC for directly driving a differential electroabsorption modulator (EAM) in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to 2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips
Keywords :
Ge-Si alloys; bipolar integrated circuits; digital communication; driver circuits; electro-optical modulation; electroabsorption; optical communication equipment; semiconductor materials; time division multiplexing; 0 to -2 V; 2.5 V; 40 Gbit/s; SiGe; SiGe bipolar technology; active network; adjustable modulator bias voltage; differential electroabsorption modulator; driver IC; fibre optic TDM system;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19980786
Filename :
684532
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1394319
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