Title :
A Rad-Hard Miniaturized Switching Module for High-Voltage Applications
Author :
Adell, Philippe C. ; Vo, Tuan ; Castillo, Linda Del ; Miyahira, Tetsuo ; Thornbourn, Dennis ; Mojarradi, Mohammad
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A miniaturized, scalable, and rad-hard high-voltage module is demonstrated as a “proof-of-concept.” The module is suitable for space applications. The design uses a commercial process that combines 0.25-μm complementary metal-oxide semiconductor (CMOS) transistors with a high-voltage lateral double-diffused metal-oxide-semiconductor (DMOS) device (>600 V). The design was simulated, fabricated, and tested and shows functionality up to 2.5 kV. Several radiation-hardening-by-design (RHBD) techniques were used to improve radiation hardness over 100 krad.
Keywords :
CMOS integrated circuits; MOSFET; high-voltage techniques; integrated circuit testing; radiation hardening (electronics); semiconductor device testing; switchgear; complementary metal-oxide semiconductor transistors; high-voltage lateral double-diffused metal-oxide-semiconductor device; rad-hard miniaturized switching module; radiation-hardening-by-design technique; Annealing; MOSFETs; Radiation effects; Radiation hardening; Annealing; double-diffused metal-oxide semiconductor (DMOS) transistors; high-voltage power supply; radiation effects; radiation-hardening-by-design (RHBD); total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2083692
