Title :
GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique
Author :
Lee, Jong-Lam ; Kyoung Jin Choi
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., South Korea
fDate :
5/28/1998 12:00:00 AM
Abstract :
A newly developed sulphur diffusion method for fabricating GaAs FETs is demonstrated. Sulphur atoms adsorbed at the surface of GaAs by the (NH4)2Sx treatment were diffused into GaAs during rapid thermal annealing. Transconductance as high as 190 mS/mm was obtained for MESFETs with 1.0 μm gate length, fabricated on the layers diffused by this technique. This diffusion technique was found to be suitable for GaAs device fabrication
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; rapid thermal annealing; semiconductor doping; sulphur; surface diffusion; (NH4)2S; (NH4)2Sx solution; 1 micron; 190 mS/mm; GaAs; GaAs MESFET fabrication; GaAs:S; RTA; S diffusion technique; rapid thermal annealing; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980819
