• DocumentCode
    139470
  • Title

    Study of the GaN HEMT Doherty Power Amplifier distortion

  • Author

    Nunes, Luis C. ; Cabral, Pedro M. ; Pedro, Jose C.

  • Author_Institution
    DETI, Inst. de Telecomun. Univ. de Aveiro, Aveiro, Portugal
  • fYear
    2014
  • fDate
    2-4 April 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The Doherty architecture is presented as an ideally linear efficiency enhancement technique. The theory behind this statement assumes that the output of the Carrier and Peaking Power Amplifiers (PAs) are ideal current sources, which is far from the truth in practical implementations. Both the Carrier and Peaking PAs are composed of nonlinear current sources suffering from both AM/AM and AM/PM distortion. Furthermore, the AM/AM and AM/PM characteristics of the Carrier and Peaking PAs, when operating in a Doherty arrangement, are very different from the ones expected from their single-ended operation, especially in GaN HEMT based Doherty PAs. This is exactly the topic addressed by this paper.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; power amplifiers; wide band gap semiconductors; AM/AM distortion; AM/PM distortion; Doherty architecture; Doherty power amplifier; GaN; HEMT; linear efficiency enhancement; Capacitance; Gain; Gallium nitride; HEMTs; Modulation; Nonlinear distortion; Power amplifiers; AM/AM; AM/PM; Doherty Amplifier; GaN; Power Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
  • Conference_Location
    Leuven
  • Type

    conf

  • DOI
    10.1109/INMMIC.2014.6815112
  • Filename
    6815112