DocumentCode
139470
Title
Study of the GaN HEMT Doherty Power Amplifier distortion
Author
Nunes, Luis C. ; Cabral, Pedro M. ; Pedro, Jose C.
Author_Institution
DETI, Inst. de Telecomun. Univ. de Aveiro, Aveiro, Portugal
fYear
2014
fDate
2-4 April 2014
Firstpage
1
Lastpage
3
Abstract
The Doherty architecture is presented as an ideally linear efficiency enhancement technique. The theory behind this statement assumes that the output of the Carrier and Peaking Power Amplifiers (PAs) are ideal current sources, which is far from the truth in practical implementations. Both the Carrier and Peaking PAs are composed of nonlinear current sources suffering from both AM/AM and AM/PM distortion. Furthermore, the AM/AM and AM/PM characteristics of the Carrier and Peaking PAs, when operating in a Doherty arrangement, are very different from the ones expected from their single-ended operation, especially in GaN HEMT based Doherty PAs. This is exactly the topic addressed by this paper.
Keywords
HEMT integrated circuits; III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; power amplifiers; wide band gap semiconductors; AM/AM distortion; AM/PM distortion; Doherty architecture; Doherty power amplifier; GaN; HEMT; linear efficiency enhancement; Capacitance; Gain; Gallium nitride; HEMTs; Modulation; Nonlinear distortion; Power amplifiers; AM/AM; AM/PM; Doherty Amplifier; GaN; Power Amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location
Leuven
Type
conf
DOI
10.1109/INMMIC.2014.6815112
Filename
6815112
Link To Document