Title :
Study of the GaN HEMT Doherty Power Amplifier distortion
Author :
Nunes, Luis C. ; Cabral, Pedro M. ; Pedro, Jose C.
Author_Institution :
DETI, Inst. de Telecomun. Univ. de Aveiro, Aveiro, Portugal
Abstract :
The Doherty architecture is presented as an ideally linear efficiency enhancement technique. The theory behind this statement assumes that the output of the Carrier and Peaking Power Amplifiers (PAs) are ideal current sources, which is far from the truth in practical implementations. Both the Carrier and Peaking PAs are composed of nonlinear current sources suffering from both AM/AM and AM/PM distortion. Furthermore, the AM/AM and AM/PM characteristics of the Carrier and Peaking PAs, when operating in a Doherty arrangement, are very different from the ones expected from their single-ended operation, especially in GaN HEMT based Doherty PAs. This is exactly the topic addressed by this paper.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; power amplifiers; wide band gap semiconductors; AM/AM distortion; AM/PM distortion; Doherty architecture; Doherty power amplifier; GaN; HEMT; linear efficiency enhancement; Capacitance; Gain; Gallium nitride; HEMTs; Modulation; Nonlinear distortion; Power amplifiers; AM/AM; AM/PM; Doherty Amplifier; GaN; Power Amplifier;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014 International Workshop on
Conference_Location :
Leuven
DOI :
10.1109/INMMIC.2014.6815112