Title :
Irradiation effects in ultrathin Si/SiO2 structures
Author :
Cantin, J.L. ; von Bardeleben, H.J. ; Autran, J.L.
Author_Institution :
Groupe de Phys. des Solides, CNRS, Paris, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
The total dose response of Si/SiO2 structures with ultrathin (20-40 Å) thermal oxide layers grown porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states
Keywords :
X-ray effects; elemental semiconductors; paramagnetic resonance; passivation; semiconductor-insulator boundaries; silicon; silicon compounds; EPR spectroscopy; Si-SiO2; Si/SiO2 structure; interface defect passivation; irradiation effects; porous silicon substrate; total dose response; ultrathin thermal oxide layer; Current measurement; Electric variables; Electric variables measurement; Electrons; Hydrogen; Paramagnetic materials; Paramagnetic resonance; Passivation; Silicon; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
