DocumentCode :
1394867
Title :
Single Event Transient Hardness of a New Complementary (npn 
pnp) SiGe HBT Technology on Thick-Film SOI
Author :
Wilcox, Edward P. ; Phillips, Stanley D. ; Cheng, Peng ; Thrivikraman, Tushar ; Madan, Anuj ; Cressler, John D. ; Vizkelethy, Gyorgy ; Marshall, Paul W. ; Marshall, Cheryl ; Babcock, Jeff A. ; Kruckmeyer, Kirby ; Eddy, Robert ; Cestra, Greg ; Zhang, Benyo
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3293
Lastpage :
3297
Abstract :
We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, while maintaining the total dose robustness associated with SiGe devices. Heavy-ion broad-beam data confirm a reduced single event upset (SEU) cross-section in a high-speed shift register circuit.
Keywords :
CMOS integrated circuits; Ge-Si alloys; dosimetry; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); semiconductor thin films; silicon-on-insulator; Si; SiGe; SiGe devices; complementary (npn + pnp) SiGe HBT technology; heavy-ion broad beam data; heavy-ion microbeam; heavy-ion strikes; high-speed shift register circuit; shortened single-event-induced transient current; single event transient hardness; single event upset cross-section; thick-film SOI technology; total dose data; total dose robustness; Radiation hardening; Silicon germanium; Silicon on insulator technology; Single event upset; Radiation hardening; silicon on insulator; silicon-germanium; single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2085014
Filename :
5658070
Link To Document :
