DocumentCode :
1395022
Title :
Micromachined polysilicon power dissipation: simulation and experiment
Author :
Allegretto, W. ; Shen, Bing ; Kleckner, Todd ; Robinson, A.M.
Author_Institution :
Dept. of Math. Sci., Alberta Univ., Edmonton, Alta., Canada
Volume :
16
Issue :
6
fYear :
1997
fDate :
6/1/1997 12:00:00 AM
Firstpage :
627
Lastpage :
637
Abstract :
In this paper, we present and implement a novel procedure for the accurate simulation of the thermoelectric effects which determine micromachined structures´ behavior. This approach is simple to discretize, with rapid numerical convergence properties, and it yields results which are in very good agreement with experimental observations. We employ this procedure in particular to calculate P1ATM/P VAC, where P1ATM (resp. AVAC) denotes heat conducted down the micromachined structure supporting arms at one atmosphere (resp. vacuum) when the device is at the same average temperature. We show that P1ATM/AVAC may not be unity, as had been earlier assumed, but is independent of input current. Finally, for a special class of devices, an analytical formula is obtained for P1ATM/PVAC in terms of device parameters, and this result is also compared with the numerical simulation results
Keywords :
convergence of numerical methods; electronic engineering computing; elemental semiconductors; micromachining; micromechanical devices; silicon; simulation; temperature distribution; thermal analysis; thermoelectricity; Si; device parameters; heat conduction; micromachined polysilicon power dissipation; rapid numerical convergence properties; simulation; thermoelectric effects; Arm; Etching; Gas detectors; Glass; Power dissipation; Resistors; Silicon; Temperature sensors; Thermal conductivity; Thermal sensors;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.640620
Filename :
640620
Link To Document :
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