Title :
SEU sensitive depth in a submicron SRAM technology
Author :
Detcheverry, C. ; Ecoffet, R. ; Duzellier, S. ; Lorfevre, E. ; Bruguier, G. ; Barak, J. ; Lifshitz, Y. ; Palau, J.M. ; Casiot, J.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
6/1/1998 12:00:00 AM
Abstract :
This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 μm SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions depositing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions depositing higher energies (at greater LET)
Keywords :
SRAM chips; integrated circuit technology; ion beam effects; 0.6 micron; LET; SEU sensitive depth; critical energy; energy deposition; heavy ion irradiation; simulation; submicron SRAM technology; Analytical models; CMOS technology; Circuit simulation; Context modeling; Error analysis; Extraterrestrial phenomena; Random access memory; Single event upset; Space technology; Switches;
Journal_Title :
Nuclear Science, IEEE Transactions on
