Title :
Characteristics of p- and n-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistors
Author :
Zhu, Chunxiang ; Sin, Johnny K O ; Hoi-Sing Hwok
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
11/1/2000 12:00:00 AM
Abstract :
Both p- and n-channel poly-Si/Si1-xGex/Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si1-xGex/Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si1-xGex material. Also an offset region placed between the channel and the drain is used to reduce the leakage current. Furthermore, the concept of conductivity modulation in the offset region is used to provide a high on-state current. Results show that the transistors provide a high on-state current as well as a low leakage current compared to those of conventional offset drain TFTs. The p- and n-channel CMTFTs can be combined to form CMOS drivers, which are very suitable for use in low temperature large area electronic systems on glass applications
Keywords :
Ge-Si alloys; cryogenic electronics; electrical conductivity transitions; elemental semiconductors; leakage currents; semiconductor materials; silicon; thin film transistors; CMTFTs; Si-SiGe-Si; active layer; conductivity modulation; gate oxide; large area electronic systems on glass; leakage current; low temperature systems; offset region; on-state current; sandwiched conductivity modulated thin-film transistors; Conducting materials; Conductivity; Driver circuits; Germanium silicon alloys; Glass; Leakage current; Plasma temperature; Silicon germanium; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
